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1. product pro?le 1.1 general description the BF1206F is a combination of two different dual gate mosfet ampli?ers with shared source and gate2 leads. the source and substrate are interconnected. internal bias circuits enable direct current (dc) stabilization and a very good cross-modulation performance during automatic gain control (agc). integrated diodes between the gates and source protect against excessive input voltage surges. the transistor is encapsulated in a sot666 micro-miniature plastic package. 1.2 features n two low noise gain controlled ampli?ers in a single package n superior cross-modulation performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio n suited for 3 volt applications 1.3 applications n gain controlled low noise ampli?ers for very high frequency (vhf) and ultra high frequency (uhf) applications with 3 v supply voltage, such as digital and analog television tuners BF1206F dual n-channel dual gate mosfet rev. 01 30 january 2006 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 2 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 1.4 quick reference data 2. pinning information 3. ordering information table 1: quick reference data per mosfet unless otherwise speci?ed. symbol parameter conditions min typ max unit v ds drain-source voltage (dc) - - 6 v i d drain current (dc) - - 30 ma | y fs | forward transfer admittance i d =4ma ampli?er a 17 22 32 ms ampli?er b 17 22 32 ms c iss(g1) input capacitance at gate1 i d = 4 ma; f = 100 mhz ampli?er a - 2.4 2.9 pf ampli?er b - 1.7 2.2 pf nf noise ?gure i d = 4 ma ampli?er a; f = 400 mhz - 1.0 1.6 db ampli?er b; f = 800 mhz - 1.0 1.6 db xmod cross modulation input level for k = 1 % at 40 db agc ampli?er a 92 97 - db m v ampli?er b 93 98 - db m v table 2: discrete pinning pin description simpli?ed outline symbol 1 gate1 (amp a) 2 source 3 gate1 (amp b) 4 drain (amp b) 5 drain (amp a) 6 gate2 123 4 5 6 sym111 amp a amp b g1a s g1b g2 da db table 3: ordering information type number package name description version BF1206F - plastic surface mounted package; 6 leads sot666
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 3 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 4. marking 5. limiting values [1] t sp is the temperature at the solder point of the source lead. 6. thermal characteristics table 4: marking type number marking code BF1206F 2n table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage (dc) - 6 v i d drain current (dc) - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 107 c [1] - 180 mw t stg storage temperature - 65 + 150 c t j junction temperature - 150 c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0 table 6: thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 240 k/w
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 4 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 7. static characteristics [1] r g1 connects gate 1 to v gg = 2.8 v. 8. dynamic characteristics 8.1 dynamic characteristics for ampli?er a table 7: static characteristics t j =25 c. symbol parameter conditions min typ max unit per mosfet; unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 m a ampli?er a 6 - - v ampli?er b 6 - - v v (br)g1-ss gate1-source breakdown voltage v gs =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v gs =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 m a 0.35 - 1.0 v i dsx drain cut-off current v g2-s = 2.5 v; v ds = 2.8 v [1] ampli?er a; r g1 = 270 k w 3 - 6.5 ma ampli?er b; r g1 = 220 k w 3 - 6.5 ma i g1-s gate1 cut-off current v g1-s =5v; v g2-s =v ds =0v ampli?er a - - 50 na ampli?er b - - 50 na i g2-s gate2 cut-off current v g2-s =5v; v g1-s =v ds =0v; - - 20 na table 8: dynamic characteristics for ampli?er a common source; t amb =25 c; v g2-s = 2.5 v; v ds = 2.8 v; i d = 4 ma. symbol parameter conditions min typ max unit | y fs | forward transfer admittance t j =25 c172232ms c iss(g1) input capacitance at gate1 f = 100 mhz [1] - 2.4 2.9 pf c iss(g2) input capacitance at gate2 f = 100 mhz [1] - 3.2 - pf c oss output capacitance f = 100 mhz [1] - 1.1 - pf c rss reverse transfer capacitance f = 100 mhz [1] -1530ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s = 2 ms; g l = 0.5 ms - 31 - db f = 400 mhz; g s = 2 ms; g l =1ms - 28 - db f = 800 mhz; g s = 3.3 ms; g l = 1 ms - 23 - db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 - 3.5 - db f = 400 mhz; y s = y s(opt) - 1.0 1.6 db f = 800 mhz; y s = y s(opt) - 1.1 1.7 db
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 5 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet [1] calculated from measured s-parameters. [2] measured in figure 32 test circuit. 8.1.1 graphs for ampli?er a xmod cross modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 88 - - db m v at 10 db agc - 85 - db m v at 40 db agc 92 97 - db m v table 8: dynamic characteristics for ampli?er a continued common source; t amb =25 c; v g2-s = 2.5 v; v ds = 2.8 v; i d = 4 ma. symbol parameter conditions min typ max unit (1) v g2-s = 2.5 v. (2) v g2-s = 2.0 v. (3) v g2-s = 1.5 v. (4) v g2-s = 1.0 v. v ds(a) = 2.8 v; t j =25 c. (1) v g1-s(a) = 1.4 v. (2) v g1-s(a) = 1.3 v. (3) v g1-s(a) = 1.2 v. (4) v g1-s(a) = 1.0 v. (5) v g1-s(a) = 0.9 v. (6) v g1-s(a) = 0.85 v. (7) v g1-s(a) = 0.8 v. v g2-s = 2.5 v; t j =25 c. fig 2. ampli?er a: transfer characteristics; typical values fig 3. ampli?er a: output characteristics; typical values v g1 - s (v) 0 2.0 1.6 0.8 1.2 0.4 001aad896 5 10 15 i d (ma) 0 (1) (2) (3) (4) v ds (v) 04 3 12 001aad897 8 4 12 16 i d (ma) 0 (7) (6) (5) (4) (3) (2) (1)
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 6 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet (1) v g2-s = 2.5 v. (2) v g2-s = 2.0 v. (3) v g2-s = 1.5 v. (4) v g2-s = 1.0 v. v ds(a) = 2.8 v; t j =25 c. (1) v g2-s = 2.5 v. (2) v g2-s = 2.0 v. (3) v g2-s = 1.5 v. (4) v g2-s = 1.0 v. v ds(a) = 2.8 v; t j =25 c. fig 4. ampli?er a: gate1 current as a function of gate1 voltage; typical values fig 5. ampli?er a: forward transfer admittance as a function of drain current; typical values v ds(a) = 2.8 v; v g2-s = 2.5 v, t amb =25 c. v ds(a) = 2.8 v; v g2 = 2.5 v; r g1(a) = 270 k w ; see figure 32 . fig 6. ampli?er a: drain current as a function of gate1 current; typical values fig 7. ampli?er a: drain current as a function of gate1 supply voltage (=v gg ); typical values v g1 - s (v) 0 2.5 2.0 1.0 1.5 0.5 001aad898 40 60 20 80 100 i g1 ( m a) 0 (1) (2) (3) (4) i d (ma) 016 12 48 001aad899 20 10 30 40 ? y fs ? (ms) 0 (1) (2) (3) (4) 001aad900 i g1 ( m a) 030 20 10 8 4 12 16 i d (ma) 0 v gg (v) 03 2 1 001aad901 2 4 6 i d (ma) 0
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 7 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet (1) r g1 = 100 k w . (2) r g1 = 120 k w . (3) r g1 = 150 k w . (4) r g1 = 180 k w . (5) r g1 = 220 k w . (6) r g1 = 270 k w . (7) r g1 = 330 k w . (8) r g1 = 390 k w . (9) r g1 = 470 k w . v g2-s = 2.5 v; t j =25 c; see figure 32 . (1) v gg = 1.0 v (2) v gg = 1.5 v (3) v gg = 2.0 v (4) v gg = 2.5 v (5) v gg = 3.0 v t j =25 c; r g1(a) = 270 k w (connected to v gg ); see figure 32 . fig 8. ampli?er a: drain current as a function of v ds and v gg ; typical values fig 9. ampli?er a: drain current as a function of gate2 voltage; typical values v gg = v ds (v) 04 3 12 001aad902 4 6 2 8 10 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9) v g2 - s (v) 04 3 12 001aad903 2 4 6 i d (ma) 0 (1) (2) (3) (4) (5)
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 8 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet v ds(a) = 2.8 v; v gg = 2.8 v; i d(nom) = 4 ma; t amb =25 c. v ds(a) = 2.8 v; v gg = 2.8 v; v g2(nom) = 2.5 v; f w = 50 mhz; f unw = 60 mhz; i d(nom) = 4 ma; t amb =25 c. fig 10. ampli?er a: typical gain reduction as a function of the agc voltage; typical values fig 11. ampli?er a: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values v ds(a) = 2.8 v; v gg = 2.8 v; v g2(nom) = 2.5 v; r g1(a) = 270 k w ; f = 50 mhz; t amb =25 c. fig 12. ampli?er a: typical drain current as a function of gain reduction; typical values 001aad904 v agc (v) 03 2 1 30 20 40 10 0 gain reduction (db) 50 001aad905 gain reduction (db) 060 40 20 90 100 110 v unw (db m v) 80 001aad906 gain reduction (db) 060 40 20 2 3 1 4 5 i d (ma) 0
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 9 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet v ds(a) = 2.8 v; v g2-s = 2.5 v; v ds(b) =0v; i d(a) = 4 ma. v ds(a) = 2.8 v; v g2-s = 2.5 v; v ds(b) =0v; i d(a) = 4 ma. fig 13. ampli?er a: input admittance and phase as a function of frequency; typical values fig 14. ampli?er a: forward transfer admittance and phase as a function of frequency; typical values v ds(a) = 2.8 v; v g2-s = 2.5 v; v ds(b) =0v; i d(a) = 4 ma. v ds(a) = 2.8 v; v g2-s = 2.5 v; v ds(b) =0v; i d(a) = 4 ma. fig 15. ampli?er a: reverse transfer admittance and phase as a function of frequency: typical values fig 16. ampli?er a: output admittance and phase as a function of frequency; typical values 001aad907 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz ) 10 10 3 10 2 001aad908 10 10 2 ? y fs ? (ms) j fs (deg) 1 - 10 - 10 2 - 1 ? y fs ? j fs f (mhz ) 10 10 3 10 2 001aad909 10 10 2 ? y rs ? ( m s) j rs (deg) 1 10 2 1 10 j rs ? y rs ? 001aad910 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 10 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 8.1.2 scattering parameters for ampli?er a 8.2 noise data for ampli?er a 8.3 dynamic characteristics for ampli?er b table 9: scattering parameters for ampli?er a v ds(a) = 2.8 v; v g2-s = 2.5 v; i d(a) = 4 ma; v ds(b) =0v;v g1-s(b) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.9923 - 4.11 2.18 174.68 0.00038 102.27 0.995 - 1.83 100 0.9930 - 8.29 2.18 169.51 0.00080 85.65 0.996 - 3.75 200 0.9877 - 16.41 2.16 159.20 0.00161 80.93 0.995 - 7.49 300 0.9802 - 24.48 2.12 149.04 0.00233 76.76 0.994 - 11.22 400 0.9705 - 32.34 2.07 138.99 0.00303 73.21 0.992 - 14.96 500 0.9596 - 39.91 2.01 129.15 0.00354 69.83 0.989 - 18.68 600 0.9483 - 47.34 1.94 119.45 0.00394 67.19 0.987 - 22.39 700 0.9361 - 54.59 1.87 109.95 0.00426 65.26 0.984 - 26.11 800 0.9239 - 61.64 1.79 100.69 0.00453 63.89 0.981 - 29.82 900 0.9129 - 68.28 1.72 91.66 0.00457 64.06 0.979 - 33.57 1000 0.9018 - 74.57 1.64 82.86 0.00456 65.60 0.976 - 37.31 table 10: noise data for ampli?er a v ds(a) = 2.8 v; v g2-s = 2.5 v; i d(a) = 4 ma. f (mhz) nf min (db) g opt r n (ratio) ratio (deg) 400 1.0 0.78 26 0.84 800 1.1 0.87 53 0.87 table 11: dynamic characteristics for ampli?er b common source; t amb =25 c; v g2-s = 2.5 v; v ds = 2.8 v; i d = 4 ma. symbol parameter conditions min typ max unit | y fs | forward transfer admittance t j =25 c - 22 - ms c iss(g1) input capacitance at gate1 f = 100 mhz [1] - 1.7 2.2 pf c iss(g2) input capacitance at gate2 f = 100 mhz [1] - 4.0 - pf c oss output capacitance f = 100 mhz [1] - 0.85 - pf c rss reverse transfer capacitance f = 100 mhz [1] -3045ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s = 2 ms; g l = 0.5 ms - 32 - db f = 400 mhz; g s = 2 ms; g l =1ms - 29 - db f = 800 mhz; g s = 3.3 ms; g l = 1 ms - 25 - db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 - 4.5 - db f = 400 mhz; y s = y s(opt) - 0.9 1.5 db f = 800 mhz; y s = y s(opt) - 1.0 1.6 db
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 11 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet [1] calculated from measured s-parameters. [2] measured in figure 32 test circuit. 8.3.1 graphs for ampli?er b xmod cross modulation input level for k=1%;f w = 50 mhz; f unw =60mhz [2] at 0 db agc 89 - - db m v at 10 db agc - 85 - db m v at 40 db agc 93 98 - db m v table 11: dynamic characteristics for ampli?er b continued common source; t amb =25 c; v g2-s = 2.5 v; v ds = 2.8 v; i d = 4 ma. symbol parameter conditions min typ max unit (1) v g2-s = 2.5 v. (2) v g2-s = 2.0 v. (3) v g2-s = 1.5 v. (4) v g2-s = 1.0 v. v ds(b) = 2.8 v; t j =25 c. (1) v g1-s(b) = 1.3 v. (2) v g1-s(b) = 1.2 v. (3) v g1-s(b) = 1.1 v. (4) v g1-s(b) = 1.0 v. (5) v g1-s(b) = 0.9 v. (6) v g1-s(b) = 0.85 v. (7) v g1-s(b) = 0.8 v. v g2-s = 2.5 v; t j =25 c. fig 17. ampli?er b: transfer characteristics; typical values fig 18. ampli?er b: output characteristics; typical values v g1 - s (v) 0 2.0 1.6 0.8 1.2 0.4 001aad911 5 10 15 i d (ma) 0 (1) (2) (3) (4) v ds (v) 04 3 12 001aad912 8 4 12 16 i d (ma) 0 (7) (6) (5) (4) (3) (2) (1)
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 12 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet (1) v g2-s = 2.5 v. (2) v g2-s = 2.0 v. (3) v g2-s = 1.5 v. (4) v g2-s = 1.0 v. v ds(b) = 2.8 v; t j =25 c. (1) v g2-s = 2.5 v. (2) v g2-s = 2.0 v. (3) v g2-s = 1.5 v. (4) v g2-s = 1.0 v. v ds(b) = 2.8 v; t j =25 c. fig 19. ampli?er b: gate1 current as a function of gate1 voltage; typical values fig 20. ampli?er b: forward transfer admittance as a function of drain current; typical values v ds(b) = 2.8 v; v g2-s = 2.5 v, t amb =25 c. v ds(b) = 2.8 v; v g2-s = 2.5 v; r g1(b) = 220 k w ; see figure 32 . fig 21. ampli?er b: drain current as a function of gate1 current; typical values fig 22. ampli?er b: drain voltage as a function of gate1 supply voltage (=v gg ); typical values v g1 - s (v) 0 2.5 2.0 1.0 1.5 0.5 001aad913 40 60 20 80 100 i g1 ( m a) 0 (1) (2) (3) (4) i d (ma) 016 12 48 001aad914 20 10 30 40 ? y fs ? (ms) 0 (1) (2) (3) (4) 001aad915 i g1 ( m a) 030 20 10 8 4 12 16 i d (ma) 0 v gg (v) 03 2 1 001aad916 2 4 6 i d (ma) 0
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 13 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet (1) r g1 = 120 k w . (2) r g1 = 150 k w . (3) r g1 = 180 k w . (4) r g1 = 220 k w . (5) r g1 = 270 k w . (6) r g1 = 330 k w . (7) r g1 = 390 k w . (8) r g1 = 470 k w . v g2-s = 2.5 v; r g1(b) connected to v gg ; see figure 32 . (1) v gg = 3.0 v. (2) v gg = 2.5 v. (3) v gg = 2.0 v. (4) v gg = 1.5 v. (1) v gg = 1.0 v. r g1(b) = 220 k w ; t j =25 c; see figure 32 . fig 23. ampli?er b: drain current as a function of v ds and v gg ; typical values fig 24. ampli?er b: drain current as a function of gate2 voltage; typical values v gg = v ds (v) 04 3 12 001aad917 4 6 2 8 10 i d (ma) 0 (1) (2) (3) (4) (5) (7) (8) (6) v g2 - s (v) 04 3 12 001aad918 2 4 6 i d (ma) 0 (1) (2) (3) (4) (5)
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 14 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet v ds(a) = 2.8 v; v g2(nom) = 2.5 v; i d(nom) = 4 ma; t amb =25 c. v ds(b) = 2.8 v; v g2 = 2.5 v; i d(nom) = 4 ma; f w = 50 mhz; f unw = 60 mhz; t amb =25 c. fig 25. ampli?er b: typical gain reduction as a function of the agc voltage; typical values fig 26. ampli?er b: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values v ds(b) = v gg = 2.8 v; v g2(nom) = 2.5 v; r g1(b) = 220 kw; f = 50 mhz; t amb = 25 c. fig 27. ampli?er b: typical drain current as a function of gain reduction; typical values 001aad919 v agc (v) 03 2 1 30 20 40 10 0 gain reduction (db) 50 001aad920 gain reduction (db) 060 40 20 90 100 110 v unw (db m v) 80 001aad921 gain reduction (db) 060 40 20 2 3 1 4 5 i d (ma) 0
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 15 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet v ds(b) = 2.8 v; v g2-s = 2.5 v; v ds(a) =0v; i d(b) = 4 ma. v ds(b) = 2.8 v; v g2-s = 2.5 v; v ds(a) =0v; i d(b) = 4 ma. fig 28. ampli?er b: input admittance and phase as a function of frequency; typical values fig 29. ampli?er b: forward transfer admittance and phase as a function of frequency; typical values v ds(b) = 2.8 v; v g2-s = 2.5 v; v ds(a) =0v; i d(b) = 4 ma. v ds(b) = 2.8 v; v g2-s = 2.5 v; v ds(a) =0v; i d(b) = 4 ma. fig 30. ampli?er b: reverse transfer admittance and phase as a function of frequency: typical values fig 31. ampli?er b: output admittance and phase as a function of frequency; typical values 001aad922 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz ) 10 10 3 10 2 001aad923 10 10 2 ? y fs ? (ms) j fs (deg) 1 - 10 - 10 2 - 1 ? y fs ? j fs j rs (deg) ? y rs ? 001aad924 10 - 1 10 2 10 - 2 1 ? y rs ? ( m s) 10 - 3 f (mhz) 10 x 10 3 10 2 j rs 10 3 10 1 001aad925 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 16 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 8.3.2 scattering parameters for ampli?er b 8.3.3 noise data for ampli?er b 9. test information table 12: scattering parameters for ampli?er b v ds(b) = 2.8 v; v g2-s = 2.5 v; i d(b) = 4 ma; v ds(a) =0v;v g1-s(a) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.9939 - 3.12 2.27 176.11 0.00089 94.68 0.993 - 1.62 100 0.9936 - 6.29 2.26 172.41 0.00170 84.37 0.993 - 3.23 200 0.9896 - 12.47 2.25 164.98 0.00336 81.29 0.992 - 6.44 300 0.9845 - 18.59 2.23 157.64 0.00503 77.17 0.990 - 9.65 400 0.9779 - 24.66 2.20 150.35 0.00642 73.23 0.988 - 12.85 500 0.9703 - 30.55 2.16 143.16 0.00769 69.72 0.986 - 16.00 600 0.9620 - 36.37 2.13 136.02 0.00873 66.28 0.983 - 19.18 700 0.9529 - 42.10 2.08 129.01 0.00967 63.19 0.980 - 22.37 800 0.9439 - 47.79 2.04 122.01 0.01024 60.51 0.977 - 25.50 900 0.9353 - 53.24 1.99 115.30 0.01058 58.52 0.975 - 28.66 1000 0.9266 - 58.46 1.94 108.64 0.01074 57.24 0.973 - 31.85 table 13: noise data for ampli?er b v ds(b) = 2.8 v; v g2-s = 2.5 v; i d(b) = 4 ma. f (mhz) nf min (db) g opt r n (ratio) ratio (deg) 400 0.9 0.8 19 0.9 800 1.0 0.83 46 0.96 fig 32. cross-modulation test setup (for one mosfet) 001aad926 r1 10 k w r l 50 w l1 ? 2.2 m h r gen 50 w v i r2 50 w r g1 c1 4.7 nf c2 4.7 nf c3 4.7 nf c4 4.7 nf v agc v gg dut v ds
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 17 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 10. package outline fig 33. package outline sot666 unit b p cd e e 1 h e l p w references outline version european projection issue date 01-08-27 04-11-08 iec jedec jeita mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 dimensions (mm are the original dimensions) 0.3 0.1 sot666 b p pin 1 index d e 1 e a l p detail x h e e a s 0 1 2 mm scale a 0.6 0.5 c x 123 4 5 6 plastic surface mounted package; 6 leads sot666 ys w m a
BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 18 of 20 philips semiconductors BF1206F dual n-channel dual gate mosfet 11. revision history table 14: revision history document id release date data sheet status change notice doc. number supersedes BF1206F_1 20060130 product data sheet - BF1206F_1 -
philips semiconductors BF1206F dual n-channel dual gate mosfet BF1206F_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 30 january 2006 19 of 20 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 16. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2006 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 30 january 2006 BF1206F_1 published in the netherlands philips semiconductors BF1206F dual n-channel dual gate mosfet 17. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 4 8.1 dynamic characteristics for ampli?er a. . . . . . . 4 8.1.1 graphs for ampli?er a . . . . . . . . . . . . . . . . . . . . 5 8.1.2 scattering parameters for ampli?er a . . . . . . . 10 8.2 noise data for ampli?er a . . . . . . . . . . . . . . . . 10 8.3 dynamic characteristics for ampli?er b. . . . . . 10 8.3.1 graphs for ampli?er b . . . . . . . . . . . . . . . . . . . 11 8.3.2 scattering parameters for ampli?er b . . . . . . . 16 8.3.3 noise data for ampli?er b . . . . . . . . . . . . . . . . 16 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 16 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 19 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 15 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 16 contact information . . . . . . . . . . . . . . . . . . . . 19

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